The Keysight P9000 is already the industry’s fastest and most versatile semiconductor parametric test solution used in R&D and the mass production of advanced logic and memory ICs
The third generation of the P9000, with its
The new test unit module allows the measurement of leaky capacitance of cutting edge semiconductor processes and provides 100-pin parallel capacitance measurement
The system uses a new parametric test unit module that boosts test speed and overcomes challenge of capacitance measurement to accelerate testing of new technology and reducing the cost-of-test in the development and manufacturing of advanced semiconductor logic and memory ICs.
New types of device structure and higher performance mean the required amount of parametric test data per advanced technology node is drastically increasing. When the P9000 was introduced, it enabled 100-pin parallel measurements for multiple devices on silicon wafer by using a dedicated per-pin test unit module. The module had all the typical measurement functions required for parametric test of voltage, current, capacitance, pulse, and frequency. In addition, direct charge measurement (DCM) technology enabled fast, 100-pin parallel capacitance measurements.
The second generation of the P9000 included the Keysight developed rapid Vt measurement technology. The rapid Vt measurement technology provided single measurements of threshold voltage (Vt) that were more than four times faster than any of the conventional test methods. In addition to 100-pin parallel measurement, faster single parameter measurements provided by the DCM and rapid Vt measurement technology enabled further improvements in test speed. Thus, advanced foundry and memory companies have adopted the P9000 platform (first and second generations) as their next-generation parametric test solution.
The third generation adds a per-pin parametric test module, the P9015A, to reduce the time for capacitance measurements in multi-layer interconnection and new device structures. The module enables the measurement of leaky capacitance by using its enhanced DCM technology and enables greater than two times faster single capacitance measurement with good data correlation for various type of capacitance (compared to conventional LCR